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Abstract

Growth as well as crystallographic and electronic properties of thin AlOx layers on Fe(110) were studied by means of low-energy electron diffraction and Auger-electron spectroscopy. Al layers of different thickness were deposited on Fe(110) and successfully oxidized to AlOx. The step-by-step oxidation of thin Al layers at room temperature leads to the formation of amorphous AlOx on top of the Fe(110) surface. A subsequent annealing at 250 ??C of the oxidized 7-?? thick Al layer results in the formation of a well-ordered Al2O3(0001) layer on the Fe(110) surface. ?? 2006 Elsevier B.V. All rights reserved.

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Dedkov, Y. S., & Fonin, M. (2007). Preparation of the subnanometer thick epitaxial Al2O3(0001) layers on Fe(110) for magnetic tunnel junctions. Applied Surface Science, 253(8), 3860–3864. https://doi.org/10.1016/j.apsusc.2006.08.014

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