Reduction of carrier concentrations of β-FeSi2 films by atomic hydrogen-assisted molecular beam epitaxy

  • Akutsu K
  • Suzuno M
  • Kawakami H
 et al. 
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Abstract

We have grown intentionally undoped β-FeSi2 thin films on Si(111) substrates by atomic hydrogen-assisted molecular beam epitaxy. The conductivity of β-FeSi2 films changed from p to n-type, and the carrier concentration decreased drastically from the order of 1019 to that of 1016 cm-3. These results show that the atomic hydrogen played an important role to decrease the number of Si vacancies acting as acceptors. © 2010 Published by Elsevier B.V.

Author-supplied keywords

  • Atomic hydrogen-assisted molecular beam epitaxy
  • Carrier concentration

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Authors

  • K. Akutsu

  • M. Suzuno

  • H. Kawakami

  • T. Suemasu

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