MBE growth of GaAs, AlAs and InAs on GaAs(001) has been monitored in real time, using simultaneous reflection high-energy electron diffraction (RHEED) and reflection anisotropy (RA) measurements, the RA measurements all being made with a fixed wavelength laser source operating at 647 nm. For the growth of GaAs and AlAs on GaAs(100), RA oscillations which occurred during the bilayer growth are explained in terms of the variation in the anisotropic distribution of surface "dimer" bonds during the growth process. RA data obtained during the growth of InAs/GaAs heterostructures are presented and discussed in relation to the influence of surface roughening upon both the RA and RHEED measurements. © 1992.
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