Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

  • Farvacque J
  • Bougrioua Z
  • Moerman I
 et al. 
  • 4

    Readers

    Mendeley users who have this article in their library.
  • 4

    Citations

    Citations of this article.

Abstract

Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 1018cm-3. We show that such a behavior can be theoretically reproduced by assuming that the columnar structure (i.e. the dislocation microstructure) is responsible for internal electronic barriers.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free