Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 1018cm-3. We show that such a behavior can be theoretically reproduced by assuming that the columnar structure (i.e. the dislocation microstructure) is responsible for internal electronic barriers.
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