Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

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Abstract

Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 1018cm-3. We show that such a behavior can be theoretically reproduced by assuming that the columnar structure (i.e. the dislocation microstructure) is responsible for internal electronic barriers.

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Farvacque, J. L., Bougrioua, Z., Moerman, I., Van Tendeloo, G., & Lebedev, O. (1999). Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE. Physica B: Condensed Matter, 273274, 140–143. https://doi.org/10.1016/S0921-4526(99)00431-7

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