InP and GaInAs were deposited on InP, by low pressure organometallic vapor phase epitaxy, in stripes opened in a layer of polycrystalline InP. Using polycrystalline InP as a mask eliminates growth spikes at the edge of the mask, and there is little (for GaInAs) or no (for InP) growth rate enhancement compared to growth on unmasked substrates. There is, however, a strong shift in the composition of GaInAs, the In mole fraction being much lower than for unmasked substrates. We explain this phenomenon by studying the difference of incorporation of In and Ga on substrates of different crystallographic orientations. © 1991.
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