Surface Shubnikov-de Haas oscillations have been measured in p-type channels of (110) silicon field effect transitors between 1.4 and 4.2 K in magnetic fields up to 10 Tesla. Two electric subbands were revealed and the effective masses of the holes in both bands could be determined. For one subband the dependence of the mass on the surface electric field was investigated. At low gate voltages the g-factor of the holes was measured from the spin splitting of the Landau-levels. © 1974.
von Klitzing, K., Landwehr, G., & Dorda, G. (1974). Shubnikov-de Haas oscillations in p-type inversion layers on n-type silicon. Solid State Communications, 14(5), 387–393. https://doi.org/10.1016/0038-1098(74)90566-3