Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlattices

  • Shimizu Y
  • Takano A
  • Uematsu M
 et al. 
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Abstract

The behavior of impurity (arsenic or boron) and silicon host atoms during ion implantation was investigated using silicon isotope superlattices. The depth profiles of silicon isotopes in the 28Si/30Si isotope superlattices before and after ion implantation were obtained by secondary ion mass spectrometry. The experimentally determined profiles were reproduced very well by a theoretical model to yield the average displacement of silicon atoms as a function of the depth. The critical displacement of silicon to induce the amorphous layer was determined together with cross-sectional transmission electron microscopy. © 2007 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Defects
  • Diffusion
  • Impurities
  • Isotopes

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Authors

  • Yasuo ShimizuInstitute for Materials Research, Tohoku University

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  • Akio Takano

  • Masashi Uematsu

  • Kohei M. Itoh

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