Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlattices

  • Shimizu Y
  • Takano A
  • Uematsu M
 et al. 
  • 4


    Mendeley users who have this article in their library.
  • 5


    Citations of this article.


The behavior of impurity (arsenic or boron) and silicon host atoms during ion implantation was investigated using silicon isotope superlattices. The depth profiles of silicon isotopes in the 28Si/30Si isotope superlattices before and after ion implantation were obtained by secondary ion mass spectrometry. The experimentally determined profiles were reproduced very well by a theoretical model to yield the average displacement of silicon atoms as a function of the depth. The critical displacement of silicon to induce the amorphous layer was determined together with cross-sectional transmission electron microscopy. © 2007 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Defects
  • Diffusion
  • Impurities
  • Isotopes

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • Yasuo ShimizuInstitute for Materials Research, Tohoku University

  • Akio Takano

  • Masashi Uematsu

  • Kohei M. Itoh

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free