The behavior of impurity (arsenic or boron) and silicon host atoms during ion implantation was investigated using silicon isotope superlattices. The depth profiles of silicon isotopes in the 28Si/30Si isotope superlattices before and after ion implantation were obtained by secondary ion mass spectrometry. The experimentally determined profiles were reproduced very well by a theoretical model to yield the average displacement of silicon atoms as a function of the depth. The critical displacement of silicon to induce the amorphous layer was determined together with cross-sectional transmission electron microscopy. © 2007 Elsevier B.V. All rights reserved.
Shimizu, Y., Takano, A., Uematsu, M., & Itoh, K. M. (2007). Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlattices. Physica B: Condensed Matter, 401–402, 597–599. https://doi.org/10.1016/j.physb.2007.09.030