Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

  • Liu H
  • Xu B
  • Ding D
 et al. 
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Abstract

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. © 2001 Elsevier Science B.V.

Author-supplied keywords

  • A1. Low dimensional structures
  • A3. Molecular beam epitaxy
  • B1. Nanomaterials

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Authors

  • H. Y. Liu

  • B. Xu

  • D. Ding

  • Y. H. Chen

  • J. F. Zhang

  • J. Wu

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