Strained semiconductors structures: Simulation of the thin films heteroepitaxial growth

  • Sahlaoui M
  • Rouhani M
  • Estève D
 et al. 
  • 4


    Mendeley users who have this article in their library.
  • 2


    Citations of this article.


We have performed an atomic scale simulation of (100) thin films heteroepitaxial growth of semiconductors with zincblende structure by associating a Monte Carlo technique with an energy model based on the valence force field approximation. It is shown that grooves showing (111) facets are formed in the early stages of the growth owing to enhanced interlayer migrations. The strain relief can be achieved within a few atomic layers, in agreement with experimental observations.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free