Stress-impedance effects in sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films

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Abstract

Sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films with a meander structure have been realized on silicon cantilever by Microelectromechanical Systems (MEMS), and the stress-impedance (SI) effects have been studied in the frequency range of 1-40 MHz. Experimental results show that the values of SI ratio increase with the deflection, and a large SI ratio of - 24.5% at 5 MHz with the deflection of 2 mm is obtained in the sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films, and the strain gauge factor is 1255 at 5 MHz, and is larger than the conventional metal strain gauge and semiconductor strain gauge, which is attractive for the applications of strain sensors. © 2006 Elsevier B.V. All rights reserved.

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Chen, J. A., Ding, W., Zhou, Y., Cao, Y., Zhou, Z. M., & Zhang, Y. M. (2006). Stress-impedance effects in sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films. Materials Letters, 60(21–22), 2554–2557. https://doi.org/10.1016/j.matlet.2006.03.065

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