Stress-impedance effects in sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films

  • Chen J
  • Ding W
  • Zhou Y
 et al. 
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Abstract

Sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films with a meander structure have been realized on silicon cantilever by Microelectromechanical Systems (MEMS), and the stress-impedance (SI) effects have been studied in the frequency range of 1-40 MHz. Experimental results show that the values of SI ratio increase with the deflection, and a large SI ratio of - 24.5% at 5 MHz with the deflection of 2 mm is obtained in the sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films, and the strain gauge factor is 1255 at 5 MHz, and is larger than the conventional metal strain gauge and semiconductor strain gauge, which is attractive for the applications of strain sensors. © 2006 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • MEMS
  • Sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films
  • Stress-impedance

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Authors

  • Yong ZhouHunan Institute of Science and Technology

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  • Ji An Chen

  • Wen Ding

  • Ying Cao

  • Zhi Min Zhou

  • Ya Min Zhang

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