Structural characterization of ZrN implanted with high Co fluences

  • Zanghi D
  • Traverse A
  • Martins Alves M
 et al. 
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Films of ZrN were prepared using Zr sputtering assisted by N bombardment on heated substrates. They were submitted to Co implantation at 300 K with various fluences to reach concentrations as high as 10%-30% in the doped zone. The long and short range orders were studied via X-ray absorption spectroscopy performed at the Zr and Co K edges and X-ray diffraction. ZrN appears stable under the amount of energy deposited in the lattice, no amorphization is observed. Co ions precipitate to form clusters. This is interpreted as due to the great stability of the matrix together with the fact that Co-N bonds are not chemically favoured. Such a precipitation was already seen in the case of Cu and Ni implantation in the AlN matrix.

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  • Didier Zanghi

  • Agnès Traverse

  • Maria Do Carmo Martins Alves

  • Thierry Girardeau

  • Jean Pierre Dallas

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