A tungsten film is rf magnetron sputtered on silicon wafers and subsequently subjected to 30 min novel discharge treatment in argon atmosphere near the sputter threshold. Vacuum annealing in the temperature range 500-650°C for 30 min is found to develop WSi2with a sheet resistance of 6 ω Sq-1. Both the temperature range used and the sheet resistance obtained are lower than those reported by others. The surface morphology is observed to be smooth and the end phase is tetragonal tungsten silicide. © 1994.
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