Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

  • Cheng X
  • Song Z
  • Jiang J
 et al. 
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Abstract

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO 2 ) 3 (SiO 2 ) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was -1.2 × 10 12 cm -2 , and the leakage current was 0.4 μA/cm 2 at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO 2 growth at the interface. © 2005 Elsevier B.V. All rights reserved.

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Authors

  • X. Cheng

  • Z. Song

  • J. Jiang

  • Y. Yu

  • W. Yang

  • D. Shen

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