Super linear position sensitive detectors using MIS structures

Citations of this article
Mendeley users who have this article in their library.
Get full text


This work reports on the fabrication process and performances presented by metal insulator semiconductor (MIS) linear position sensitive detectors (PSD) with an active length of 6 cm. The use of long sensitive areas allows the PSD to achieve higher resolution without the need of a highly accurate light spot integration mechanism. The PSD is built in a multilayered structure consisting of Cr/a-Si:H (n+doped)/a-Si:H (intrinsic)/SiOx(passivation layer)/Au, where the active a-Si:H layers were deposited by a modified triode plasma enhanced chemical vapour deposition (MTPECVD), which allows the deposition of highly electronic grade material with a low (≈ × 1015cm-3) defect density inferred by CPM. The sensor linearity and sensitivity shows dependence on the sensor width to length ratio and on the value of load resistance. Sensitivities of more than 30 mV/cm were achieved with linearity near 99%. Besides that, this type of MIS structure allows an improved spectral response near the UV region and has the maximum response at 540 nm. © 2004 Published by Elsevier B.V.




Águas, H., Pereira, L., Costa, D., Fortunato, E., & Martins, R. (2005). Super linear position sensitive detectors using MIS structures. In Optical Materials (Vol. 27, pp. 1088–1092).

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free