Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition

  • Jin S
  • Ramsteiner M
  • Grahn H
 et al. 
  • 4


    Mendeley users who have this article in their library.
  • 18


    Citations of this article.


The excitonic emissions near band edge, the donor-to-acceptor pair (DAP) emissions and the yellow luminescence (YL) in undoped GaN and As-doped GaN at a low doping level have been investigated. At 4.2 K, the intensity of the DAP emissions around 3.28 eV were observed to increase when the As concentration is increased. This enhancement has been correlated with an increase of the As-related isoelectronic centers. On the other hand, a remarkable reduction of the yellow luminescence due to the incorporation of As into GaN is found at 4.2 K, and it persists up to room temperature where the DAP signal has got quenched due to thermal ionization. These results suggest that the suppression of the YL is due to the passivation of the YL deep centers by the As-incorporation.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • Manfred RamsteinerPaul-Drude-Institut für Festkörperelektronik

  • S. R. Jin

  • H. T. Grahn

  • K. H. Ploog

  • Z. Q. Zhu

  • D. X. Shen

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free