Photoemission from the CsCl structure, n-type semiconductor CsAu confirms the presence of an adsorbed Cs layer on films produced by vapor phase reaction between bulk Au and Cs vapor. Cs 4d and 5p spectra yield a well-defined Cs core-electron binding-energy shift of -0.58 ± 0.06 eV for this layer relative to the Cs in bulk CsAu. The Au 4f and 5d spectra do not exhibit a measurable surface-atom binding-energy shift. Annealing of reacted CsAu films produced by the reaction of Au(100) with Cs vapor show ordered diffraction patterns that are coverage dependent. © 1995.
Wertheim, G. K., Rowe, J. E., Chiang, C. M., Malic, R. A., & Buchanan, D. N. E. (1995). Surface properties of the semiconductor CsAu. Surface Science, 330(1), 27–33. https://doi.org/10.1016/0039-6028(95)00114-X