Surface properties of the semiconductor CsAu

  • Wertheim G
  • Rowe J
  • Chiang C
 et al. 
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Abstract

Photoemission from the CsCl structure, n-type semiconductor CsAu confirms the presence of an adsorbed Cs layer on films produced by vapor phase reaction between bulk Au and Cs vapor. Cs 4d and 5p spectra yield a well-defined Cs core-electron binding-energy shift of -0.58 ± 0.06 eV for this layer relative to the Cs in bulk CsAu. The Au 4f and 5d spectra do not exhibit a measurable surface-atom binding-energy shift. Annealing of reacted CsAu films produced by the reaction of Au(100) with Cs vapor show ordered diffraction patterns that are coverage dependent. © 1995.

Author-supplied keywords

  • CsAu
  • Low energy electron diffraction (LEED)
  • Soft X-ray photoelectron spectroscopy
  • Surface segregation

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Authors

  • G. K. Wertheim

  • J. E. Rowe

  • C. M. Chiang

  • R. A. Malic

  • D. N.E. Buchanan

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