Surface properties of the semiconductor CsAu

Abstract

Photoemission from the CsCl structure, n-type semiconductor CsAu confirms the presence of an adsorbed Cs layer on films produced by vapor phase reaction between bulk Au and Cs vapor. Cs 4d and 5p spectra yield a well-defined Cs core-electron binding-energy shift of -0.58 ± 0.06 eV for this layer relative to the Cs in bulk CsAu. The Au 4f and 5d spectra do not exhibit a measurable surface-atom binding-energy shift. Annealing of reacted CsAu films produced by the reaction of Au(100) with Cs vapor show ordered diffraction patterns that are coverage dependent. © 1995.