Thin layers of new salt, BET-TTF[Ni(dmit)2]2, electrodeposited on silicon wafers

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Abstract

The new charge transfer salt, BET-TTF[Ni(dmit)2]2, was obtained using the electrodeposition method. Thin layers of this new salt were grown on (001)-oriented silicon wafers as anode. The stoichiometry of the new salt was evaluated by infrared and Raman spectroscopy and the unit cell parameters of its structure were determined by powder X-ray diffraction. It was found that, by using different current density during the electrodeposition, layers of different morphologies can be obtained, but the stoichiometry of the formed salt remains the same. © 2008 Elsevier Masson SAS. All rights reserved.

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Kowalska, A. A., Savy, J. P., de Caro, D., Valade, L., Vendier, L., Laukhina, E., … Ulanski, J. (2008). Thin layers of new salt, BET-TTF[Ni(dmit)2]2, electrodeposited on silicon wafers. Solid State Sciences, 10(12), 1777–1779. https://doi.org/10.1016/j.solidstatesciences.2008.02.018

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