Three-step process for epitaxial growth of (111)-oriented C60films on alkali-halide substrates

  • Dai Z
  • Naramoto H
  • Narumi K
 et al. 
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Abstract

Epitaxial (111)-oriented C60films have been grown on alkali-halide substrates, KCl (100), KBr (100) and NaCl (100) by a three-step process: (1), substrate surface cleaning by high temperature heating; (2), initial deposition with a low deposition rate to grow two or three monolayers (ML); and (3), deposition with a high deposition rate to grow a film with expected thickness. It was found that (111)-oriented epitaxial C60films could be grown at low temperatures in a wide temperature range, from 40 to 120°C. By this three-step process, we can also grow epitaxial C60films at deposition rates as high as 35 angstrom/min.

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Authors

  • Z. Dai

  • H. Naramoto

  • K. Narumi

  • S. Yamamoto

  • A. Miyashita

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