Abstract
Thick-film, niobate-glass threshold switches have been made in reducing gas atmospheres at high temperatures (1100-1400°C) using SiO2 and B2O3 as glass formers. Their temperature characteristics are far superior to those of similar vanadate switches previously reported [1,2], and they are stable at low ON currents (
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CITATION STYLE
APA
Higgins, J. K. (1977). Threshold switching in niobate glass - thick-film devices. Journal of Non-Crystalline Solids, 23(3), 321–348. https://doi.org/10.1016/0022-3093(77)90117-X
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