An equation is derived for the time dependent current in the avalanche region of a uniform diode, for the case of one charged carrier of either electron or hole is injected, for unequal ionization rates and drift velocities of electrons and holes. The appearing time-constant differs from earlier results, derived on the basis of the well known intrinsic response time. The noise characteristics of the current are established for a Poissonian injection of an electron or hole. The factor which describes the influence of the statistics of the multiplication for low frequencies, is also found to differ from previous published results. At high current multiplication factors the present study is in agreement with previous work. © 1975.
Walma, A. A., & Hackam, R. (1975). On the time dependency of the avalanche process in semiconductors. Solid State Electronics, 18(6), 511–517. https://doi.org/10.1016/0038-1101(75)90027-1