Time-dependent (fluence-dependent) emission spectra from poly(methylphenylsilane) (PMPS) and poly(methylpropylsilane) (PMPrS) were measured at room temperature under irradiation of 2.0 MeV He+ion beams. Especially, emission spectra of poly(di-n-hexylsilane) (PDHS) were obtained at 354, 313 and 270 K. Fluorescences around 355 nm for PMPS, 350 nm for PMPrS, and 385 and 340 nm for PDHS from band gap transitions (σ*-σ transition) were observed. Furthermore, emissions around 440 nm were observed at all temperature examined. These spectra drastically changed under ion beam irradiation. We conclude that the 440 nm emission is due to the defect and network structures of polysilanes induced by ion beams. © 1995.
Shibata, H., Seki, S., Tagawa, S., Yoshida, Y., & Ishigure, K. (1995). Time-dependent emission spectra from polysilane thin films irradiated by MeV ion beams. Nuclear Inst. and Methods in Physics Research, B, 105(1–4), 42–45. https://doi.org/10.1016/0168-583X(95)00828-4