Titanium nitride films for barrier applications produced by rapid thermal CVD and subsequent in-situ annealing

  • Leutenecker R
  • Fröschle B
  • Cao-Minh U
 et al. 
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Abstract

TIN films with a thickness of typically 50 nm were deposited by rapid thermal chemical vapour deposition (RTCVD) using a TiCl4NH3process. The deposition temperature was varied between 300 °C and 600 °C. The aim was to develop a low-temperature CVD process with low film contamination for diffusion barriers. We achieved this by an in-situ annealing step immediately after deposition. A step coverage of nearly 100% and an excellent yield concerning barrier failures could be reached. The composition of the films was characterized by Rutherford backscattering spectroscopy, the structure by X-ray diffraction. The chlorine and oxygen contents highly depend on the chemical reactivity of the annealing gas. Deposition at 450 °C and subsequent annealing in ammonia at 450 °C leads to a very low chlorine content (

Author-supplied keywords

  • Annealing
  • Chemical vapour deposition
  • Deposition process
  • Diffusion barriers
  • Titanium nitride

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Authors

  • R. Leutenecker

  • B. Fröschle

  • U. Cao-Minh

  • P. Ramm

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