Track formation in KTiOPO4 by MeV implantation of light ions

  • Wesch W
  • Opfermann T
  • Schrempel F
 et al. 
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In order to investigate the damaging in KTiOPO4due to light ion irradiation with energies in the MeV region various light ions were implanted at room temperature. In the case of 4 MeV N and 3 MeV B implantation in the near-surface region, i.e. in the region of dominating electronic energy deposition, by means of RBS an ion-fluence dependent damage production up to the formation of amorphous layers at ion fluences NI= 3 × 1013and 1.5 × 1014cm-2, respectively, was found. Both XTEM and RBS measurements indicate that the accumulation of detectable damage requires a repeated overlap of individual damage cascades which leads to the formation of amorphous tracks. The diameter of the resulting tracks determined from XTEM images agrees well with that determined from the ion fluence dependence of the RBS minimum yield using the overlap damage model and a fourfold overlap of individual cascades. Contrary to that, 1 MeV Li-implantation does not result in a remarkable damage formation near the surface up to ion fluences in the order of 1016cm-2. The results show that the near-surface damage in KTP is due to high electronic excitation and occurs only if the electronic energy deposition per ion and unit length exceeds a critical value around 100 eV/ion/Å. © 2001 Elsevier Science B.V.

Author-supplied keywords

  • Insulator
  • Ion implantation
  • Ion tracks
  • KTP
  • Radiation damage

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  • W. Wesch

  • Th Opfermann

  • F. Schrempel

  • Th Höche

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