We briefly review the growth and structural properties of InAsxSb1-x(x ≤ 0.05) bulk single crystals and InAsxSb1-x(x ≤ 0.06) epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and 300 K mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed. © 2003 Elsevier B.V. All rights reserved.
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