Transport and relaxation properties of photo-induced carriers in amorphous Si based films with artificail potential structure

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Abstract

The artificial structures with a-SixGe1-xH(F) alloy, i.e., compositional gradient and modulation doping ninimultilayer were investigated with regard either the carrier transport or the relation of photo-induced carriers. A limited compositional gradient, dV/dX < 5×103eV/cm, contributes to remove the unfavourable space charge effect at the interfaceof by the internal field. Light-induced "barrier-modulation" was found in Schottky diode made of the modulation doping ninimultilayer film, which led to a high photoconductive gain above 10. © 1987.

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Shirai, H., & Shimizu, I. (1987). Transport and relaxation properties of photo-induced carriers in amorphous Si based films with artificail potential structure. Journal of Non-Crystalline Solids, 9798(PART 2), 1035–1038. https://doi.org/10.1016/0022-3093(87)90248-1

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