Two-to-three dimensional transition by magnetic field on weak localization phenomena for tilted magneto-conductance in In2O3-x films

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Abstract

To study the two-to-three dimensional transition on the weak localization phenomena in thin metallic In2O3-x films, we have carried out the magneto-conductance measurements for those films with various thickness up to the magnetic field of 9 T. We have measured the magneto-conductance as functions of the film thickness and the angle between the directions of the electric current and the magnetic field. From the magnitude correlation between the film thickness and the cyclotron diameter, we found that the anisotropic behavior of the magneto-conductance observed in the low magnetic field has been disappeared as the magnetic field increases. As a result we have clearly observed the two-to-three dimensional transition of the electronic system and the crossover effect on the positive magneto-conductance in the weak localization regime. © 2001 Published by Elsevier Science B.V.

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Hatta, N., Kobori, H., & Ohyama, T. (2001). Two-to-three dimensional transition by magnetic field on weak localization phenomena for tilted magneto-conductance in In2O3-x films. Physica B: Condensed Matter, 298(1–4), 482–485. https://doi.org/10.1016/S0921-4526(01)00367-2

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