Variation of the DC-resistance of smooth and atomically rough silver films during exposure to C2H6and C2H4

  • Grabhorn H
  • Otto A
  • Schumacher D
 et al. 
  • 1

    Readers

    Mendeley users who have this article in their library.
  • 21

    Citations

    Citations of this article.

Abstract

Adsorption of C2H4and C2H6on smooth silver films increases the DC resistivity R in a way which correlates with the adsorbate induced density of states at the Fermi energy ε{lunate}F. The strongest increase in the film resistivity is observed after formation of atomic scale roughness by submonolayer quantities of cold-deposited silver. In good agreement with theory we find that the DC cross section of a silver adatom on smooth silver is about 14 Å2. When atomically roughened films are gradually exposed to C2H4, R decreases first and eventually increases, as observed for smooth films. The decrease of R is explained by a decrease of the Ag adatom induced density of states at ε{lunate}Fby adatom-C2H4-bonding via the π*orbital of C2H4and the adatom 5s-resonance. The initial relatively strong increase of R of an atomically roughened silver film by adsorption of C2H6is explained by counteracting the smoothening of the surface profile by the electrons (Smoluchowski effect), because electrons at ε{lunate}Fcan hardly penetrate C2H6. © 1992.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • H. Grabhorn

  • A. Otto

  • D. Schumacher

  • B. N.J. Persson

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free