Variation of the DC-resistance of smooth and atomically rough silver films during exposure to C2H6and C2H4

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Abstract

Adsorption of C2H4and C2H6on smooth silver films increases the DC resistivity R in a way which correlates with the adsorbate induced density of states at the Fermi energy ε{lunate}F. The strongest increase in the film resistivity is observed after formation of atomic scale roughness by submonolayer quantities of cold-deposited silver. In good agreement with theory we find that the DC cross section of a silver adatom on smooth silver is about 14 Å2. When atomically roughened films are gradually exposed to C2H4, R decreases first and eventually increases, as observed for smooth films. The decrease of R is explained by a decrease of the Ag adatom induced density of states at ε{lunate}Fby adatom-C2H4-bonding via the π*orbital of C2H4and the adatom 5s-resonance. The initial relatively strong increase of R of an atomically roughened silver film by adsorption of C2H6is explained by counteracting the smoothening of the surface profile by the electrons (Smoluchowski effect), because electrons at ε{lunate}Fcan hardly penetrate C2H6. © 1992.

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Grabhorn, H., Otto, A., Schumacher, D., & Persson, B. N. J. (1992). Variation of the DC-resistance of smooth and atomically rough silver films during exposure to C2H6and C2H4. Surface Science, 264(3), 327–340. https://doi.org/10.1016/0039-6028(92)90189-D

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