Vertical versus horizontal reactor: An optical study of the gas phase in a MOCVD reactor

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Abstract

We have investigated experimentally temperature profiles as well as velocity profiles above the susceptor in a MOCVD reactor at atmospheric pressure as a function of flow rate, cooling of the reactor, carrier gas and vertical of horizontal design. The results show that a more uniform and narrower high temperature zone is obtained with higher flow rate, with cooling and for vertical design. The latter observation shows that gravitational effects are still important at intermediate flow rates and can be used with advantage to increase the homogeneity of the growth conditions. Preliminary numerical calculations lead to similar results. © 1986.

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Stock, L., & Richter, W. (1986). Vertical versus horizontal reactor: An optical study of the gas phase in a MOCVD reactor. Journal of Crystal Growth, 77(1–3), 144–150. https://doi.org/10.1016/0022-0248(86)90294-0

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