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Asahiko Matsuda

  • Ph.D.
  • Postdoctoral Researcher
  • National Institute for Materials Science
  • 8h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 190CitationsNumber of citations received by Asahiko's publications. Updated daily.

Research interests

Materials informaticsDefects in semiconductor devices

About

Born in Japan in 1986.

Co-authors (23)

  • Bablu Mukherjee
  • Yoshinori Takao
  • Hirotaka Tsuda

Publications (5)

  • A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site

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  • Modeling early breakdown failures of gate oxide in SiC power MOSFETs

    • Chbili Z
    • Matsuda A
    • Chbili J
    • et al.
    N/AReaders
    1Citations
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  • Capture cross section: A variable duty cycle charge pumping study

    • Matsuda A
    • Ryan J
    • Campbell J
    • et al.
    N/AReaders
    0Citations
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  • Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

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    N/ACitations
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  • Plasma-induced defect-site generation in si substrate and its impact on performance degradation in scaled MOSFETs

    • Eriguchi K
    • Nakakubo Y
    • Matsuda A
    • et al.
    N/AReaders
    27Citations
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Professional experience

Postdoctoral Researcher

National Institute for Materials Science

May 2015 - Present

Guest Researcher

National Institute of Standards and Technology

May 2013 - April 2015(2 years)

Research Fellow

Japan Society for the Promotion of Science

April 2011 - March 2013(2 years)

Research Internship

Toshiba Corp.

July 2008 - August 2008(a month)

Education history

Ph.D

Graduate School of Engineering, Kyoto University

April 2010 - May 2013(3 years)

M.Eng.

Graduate School of Engineering, Kyoto University

April 2008 - March 2010(2 years)

B.Eng.

Graduate School of Engineering, Kyoto University

April 2004 - March 2008(4 years)