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Axel Herguth

  • Group Leader
  • University of Konstanz, Department of Physics
  • 12h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 559CitationsNumber of citations received by Axel's publications. Updated daily.

Other IDs

Research interests

Semiconductor CharacterizationSilicon based PhotovoltaicsDefects in crystalline silicon

Co-authors (64)

Publications (5)

  • A 3-state defect model for light-induced degradation in boron-doped float-zone silicon

    • Sperber D
    • Herguth A
    • Hahn G
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  • Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments

    • Sperber D
    • Graf A
    • Heilemann A
    • et al.
    N/AReaders
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  • Degradation of surface passivation and its impact on light-induced degradation experiments

    • Sperber D
    • Graf A
    • Skorka D
    • et al.
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  • Time-resolved photoluminescence imaging with electronic shuttering using an image intensifier unit

    • Kiliani D
    • Herguth A
    • Micard G
    • et al.
    N/AReaders
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  • Minority charge carrier lifetime mapping of crystalline silicon wafers by time-resolved photoluminescence imaging

    • Kiliani D
    • Micard G
    • Steuer B
    • et al.
    N/AReaders
    N/ACitations
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Professional experience

Group Leader

University of Konstanz, Department of Physics

May 2005 - Present