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Erwann Fourmond

  • Associate Professor
  • Institut des Nanotechnologies de Lyon, INSA Lyon
  • 12h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 382CitationsNumber of citations received by Erwann's publications. Updated daily.

Other IDs

Research interests

Silicon photovoltaics Plasma enhanced CVD dielectrics silicon electronic properties doping Engineering

Co-authors (95)

  • Alain Fave
  • Aurelien Gaufres
  • Maxime Forster

Publications (5)

  • Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    • Krawczak E
    • Agata Z
    • Gulkowski S
    • et al.
    N/AReaders
    0Citations
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  • Laser ablation compatible substoichiometric SiO x /SiN y passivating rear side mirror for passivated emitter and rear thin-film crystalline silicon solar cells

    • Gérenton F
    • Mandorlo F
    • Fourmond E
    • et al.
    N/AReaders
    N/ACitations
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  • Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells

    • Remache L
    • Nychyporuk T
    • Guermit N
    • et al.
    N/AReaders
    N/ACitations
    Get full text
  • Light trapping in advanced solar cells: photonic crystals and disordered structures

    • Seassal C
    • Ding H
    • Champory R
    • et al.
    N/AReaders
    N/ACitations
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  • Incomplete ionization and carrier mobility in compensated p-type and n-type silicon

    • Forster M
    • Rougieux F
    • Cuevas A
    • et al.
    N/AReaders
    1Citations

Professional experience

Associate Professor

Institut des Nanotechnologies de Lyon, INSA Lyon

September 2005 - Present

Research Engineer

SIMaP

September 2002 - August 2005(3 years)

Education history

Engineer

INSA - Lyon - Institut National des Sciences Appliquées

September 1991 - September 1996(5 years)