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Erwann Fourmond

  • Associate Professor
  • Institut des Nanotechnologies de Lyon, INSA Lyon
  • 11h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 384CitationsNumber of citations received by Erwann's publications. Updated daily.

Other IDs

Research interests

Silicon photovoltaics Plasma enhanced CVD dielectrics silicon electronic properties doping Engineering

Co-authors (95)

  • Alain Fave
  • Aurelien Gaufres
  • Maxime Forster

Publications (5)

  • Effect on compact-TiO2 by spray pyrolysis technique and its interface between TiO2/Si layer for tandem solar application

    • Nukunudompanich M
    • Suzuki K
    • Hasegawa K
    • et al.
    N/AReaders
    N/ACitations
  • Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    • Krawczak E
    • Agata Z
    • Gulkowski S
    • et al.
    N/AReaders
    N/ACitations
    Get full text
  • Impact of wafer quality on boron-diffused n-type bifacial solar cells

    • Forster M
    • Nichiporuk O
    • Degoulange J
    • et al.
    N/AReaders
    N/ACitations
  • Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon

    • Forster M
    • Rougieux F
    • Cuevas A
    • et al.
    N/AReaders
    N/ACitations
    Get full text
  • PROCEDE DE DOPAGE D'UN MATÉRIAU SEMI-CONDUCTEUR

    • Forster M
    • Fourmond E
    • Stadler J
    • et al.
    N/AReaders
    N/ACitations

Professional experience

Associate Professor

Institut des Nanotechnologies de Lyon, INSA Lyon

September 2005 - Present

Research Engineer

SIMaP

September 2002 - August 2005(3 years)

Education

Engineer

INSA - Lyon - Institut National des Sciences Appliquées

September 1991 - September 1996(5 years)