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esteve amat

  • Electronic
  • JdC
  • Universitat Politecnica de Cataluna Centre de Recerca en Enginyeria Biomedica
  • 11h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 517CitationsNumber of citations received by esteve's publications. Updated daily.

About

Esteve Amat was born in Barcelona (1977). He received the degree in Electronic Engineering from the UAB (Universitat Autònoma de Barcelona) in 2004. Currently, he is an Assistant Professor in Electronics at the Electronics Engineering Department of the UAB, at the same time he is doing his ph.D. study. His main research interest is foquest to the analysis of the degradation and breakdown of ultra-thin SiO2 and high-k dielectrics films. He has done different stays in IMEC (International Micro-Electronic Center, Leuven, Belgium) where he has studied the Channel Hot-Carrier degradation in short channel nMOS and pMOS transistors with different dielectric components as SiO2 and high-k as well.

Research interests

Recent publications

  • Suitability of HSQ as fabrication material for vertical devices at nano-scale

    • Amat E
    • Del Moral A
    • Engelmann H
    • et al.
    N/AReaders
    N/ACitations
  • Microwave filters with improved stopband based on sub-wavelength resonators

    • García-García J
    • Martín F
    • Falcone F
    • et al.
    N/AReaders
    N/ACitations

Professional experience

JdC

UPC

January 2011 - Present

postdoc

UAB

June 2009 - December 2010(2 years)

phD student

UAB

September 2004 - December 2009(5 years)

Education

Electronic Engineering

UAB

September 2001 - July 2004(3 years)

Co-authors (94)

  • Antonio Calomarde
  • Nivard Aymerich
  • Francesc Moll

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