Esteve Amat was born in Barcelona (1977). He received the degree in Electronic Engineering from the UAB (Universitat Autònoma de Barcelona) in 2004. Currently, he is an Assistant Professor in Electronics at the Electronics Engineering Department of the UAB, at the same time he is doing his ph.D. study. His main research interest is foquest to the analysis of the degradation and breakdown of ultra-thin SiO2 and high-k dielectrics films. He has done different stays in IMEC (International Micro-Electronic Center, Leuven, Belgium) where he has studied the Channel Hot-Carrier degradation in short channel nMOS and pMOS transistors with different dielectric components as SiO2 and high-k as well.