Skip to content

Ewa Papis Polakowska

  • PHD
  • Institute of Electron Technology
  • 3h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 25CitationsNumber of citations received by Ewa's publications. Updated daily.

Other IDs

Research interests

SemiconductorsPassivationSurface chemistryPhotodetectorsNanotechnology

About

I am working on the technology of the infrared photodetectors based on the T2SL InAs/GaSb materials system, an especially on the passivation of surface by using the thiols compound.

Co-authors (24)

  • Witold Rzodkiewicz

Publications (5)

  • Noise-current correlations in InAs/GaSb Type-II superlattice midwavelength infrared detectors

    • Ciura L
    • Kolek A
    • Jurenczyk J
    • et al.
    N/AReaders
    3Citations
    Get full text
  • Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol

    • Papis-Polakowska E
    • Kaniewski J
    • Jurenczyk J
    • et al.
    N/AReaders
    2Citations
    Get full text
  • Passivation studies of GaSb-based superlattice structures

    • Papis-Polakowska E
    • Kaniewski J
    • Szade J
    • et al.
    N/AReaders
    4Citations
    Get full text
  • X-Ray photoelectron spectroscopy-methodology and application

    • Papis-Polakowska E
    • White R
    • Deeks C
    • et al.
    N/AReaders
    0Citations
    Get full text
  • Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

    • Papis-Polakowska E
    • Kaniewski J
    • Szade J
    • et al.
    N/AReaders
    3Citations
    Get full text

Professional experience

Instytut Technologii Elektronowej