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Montserrat Nafria

  • Full Professor
  • Universitat Autonoma Barcelona
  • 30h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 3627CitationsNumber of citations received by Montserrat's publications. Updated daily.


Montserrat Nafria received the Ph.D. degree in Physics from the Universitat Autonoma de Barcelona, Spain, in 1993, where she is currently a Full Professor at the Department of Electronic Engineering and group leader of the ‘Reliability of Electron Devices and Circuits’ group (REDEC). Her major research interests include CMOS device and circuit reliability. Currently, she is working on the characterization and modelling of the aging (BTI and channel hot carrier degradations) and variability of advanced MOS devices. This is done from the nanoscale level, by studying the phenomena using Atomic Force Microscope-related techniques, up to circuit level, by developing models for circuit simulators that account for the time-dependent variability of the devices. She is also interested in the characterization and modelling of Resistive RAM and graphene based devices. She is the author or coauthor of more than 250 research papers in scientific journals and conferences in all these fields.

Recent publications

  • Device variability tolerance of a RRAM-based self-organizing neuromorphic system

    • Pedro M
    • Martin-Martinez J
    • Miranda E
    • et al.
  • Weighted time lag plot defect parameter extraction and GPU-based BTI modeling for BTI variability

    • Van Santen V
    • Diaz-Fortuny J
    • Amrouch H
    • et al.

Professional experience

Full Professor

Universitat Autonoma Barcelona