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Muhammad Elmessary

    • 6h-indexImpact measure calculated using publication and citation counts. Updated daily.
    • 106CitationsNumber of citations received by Muhammad's publications. Updated daily.

    Other IDs

    Research interests

    MC simulation

    Co-authors (16)

    • Guillermo Indalecio
    • Enrique Comesaña Figueroa
    • Daniel Nagy
    • Manuel Aldegunde
    • Karol Kalna

    Publications (5)

    • FinFET versus Gate-All-Around Nanowire FET: Performance, Scaling and Variability

      • Nagy D
      • Indalecio G
      • Indalecio G
      • et al.
      N/AReaders
      1Citations
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    • Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

      • Nagy D
      • Aldegunde M
      • Elmessary M
      • et al.
      N/AReaders
      0Citations
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    • Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations

      • Indalecio G
      • Garcia-Loureiro A
      • Elmessary M
      • et al.
      N/AReaders
      0Citations
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    • 3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections

      • Nagy D
      • Elmessary M
      • Aldegunde M
      • et al.
      N/AReaders
      14Citations
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    • 3D Finite Element Schrödinger equation corrected Monte Carlo simulations of nanoscale FinFETs

      • Nagy D
      • Elmessary M
      • Aldegunde M
      • et al.
      N/AReaders
      0Citations
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