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Muhammad Elmessary

    • 6h-indexImpact measure calculated using publication and citation counts. Updated daily.
    • 96CitationsNumber of citations received by Muhammad's publications. Updated daily.

    Other IDs

    Research interests

    MC simulation

    Co-authors (17)

    • Guillermo Indalecio
    • Enrique Comesaña Figueroa
    • Daniel Nagy
    • Manuel Aldegunde
    • Karol Kalna

    Publications (5)

    • FinFET versus Gate-All-Around Nanowire FET: Performance, Scaling and Variability

      • Nagy D
      • Indalecio G
      • Indalecio G
      • et al.
      N/AReaders
      0Citations
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    • 3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections

      • Nagy D
      • Elmessary M
      • Aldegunde M
      • et al.
      N/AReaders
      13Citations
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    • Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors

      • Elmessary M
      • Nagy D
      • Aldegunde M
      • et al.
      N/AReaders
      0Citations
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    • 3D Finite Element Schrödinger equation corrected Monte Carlo simulations of nanoscale FinFETs

      • Nagy D
      • Elmessary M
      • Aldegunde M
      • et al.
      N/AReaders
      0Citations
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    • 3D Monte Carlo study of scaled SOI FinFETs using 2D Schrödinger quantum corrections

      • Elmessary M
      • Nagy D
      • Aldegunde M
      • et al.
      N/AReaders
      1Citations
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