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Peter Goodhew

  • Professor
  • University of Birmingham
  • 23h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 1901CitationsNumber of citations received by Peter's publications. Updated daily.

Research interests

Engineering education

Groups

Co-authors (181)

Publications (5)

  • Incorporation of Sb in InAsGaAs quantum dots

    • Molina S
    • Sánchez A
    • Beltrán A
    • et al.
    N/AReaders
    26Citations
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  • V-defects and dislocations in InGaN/GaN heterostructures

    • Sánchez A
    • Gass M
    • Papworth A
    • et al.
    N/AReaders
    17Citations
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  • Influence of the surface morphology on the relaxation of low-strained In<inf>x</inf>Ga<inf>1 - x</inf>As linear buffer structures

    • Valtueña J
    • Sacedón A
    • Alvarez A
    • et al.
    N/AReaders
    12Citations
  • Non-uniform strain relaxation in In<inf>x</inf>Ga<inf>1-x</inf>As layers

    • Alvarez A
    • Calle F
    • Sacedón A
    • et al.
    N/AReaders
    4Citations
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  • Growth and characterization of relaxed epilayers of InGaAs on GaAs

    • Dunstan D
    • Dixon R
    • Kidd P
    • et al.
    N/AReaders
    15Citations
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Education

BSc

University of Birmingham

July 1964 - Present