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Ronaldo Pela

  • Prof. Dr.
  • Assistant Professor
  • Instituto Tecnológico de Aeronáutica, Department of Physics
  • 7h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 140CitationsNumber of citations received by Ronaldo's publications. Updated daily.

Other IDs

Research interests

Semiconductor Materials Nanotechnology Spintronics First principles calculations

Co-authors (23)

  • Maxim Kotsemir
  • Michael Joe
  • Filipe Matusalém
  • Ehesan Ali
  • Mircea Chipara

Publications (5)

  • All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces

    • Filho O
    • Ribeiro Jr. M
    • Pelá R
    • et al.
    N/AReaders
    4Citations
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  • Theoretical study of the indium incorporation into III-V compounds revisited: The role of indium segregation and desorption

    • Pelá R
    • Teles L
    • Marques M
    • et al.
    N/AReaders
    2Citations
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  • Digital magnetic heterostructures based on GaN using GGA-1/2 approach

    • Santos J
    • Marques M
    • Ferreira L
    • et al.
    N/AReaders
    8Citations
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  • GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations

    • Pelá R
    • Marques M
    • Ferreira L
    • et al.
    N/AReaders
    16Citations
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  • Simulation of a spintronic transistor: A study of its performance

    • Pelá R
    • Teles L
    N/AReaders
    7Citations
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Professional experience

Assistant Professor

Instituto Tecnológico de Aeronáutica, Department of Physics

October 2009 - Present

Education history

PhD

Instituto Tecnológico de Aeronáutica (ITA)

February 2008 - January 2012(4 years)

Bachelor

Instituto Tecnológico de Aeronáutica (ITA)

January 2003 - December 2007(5 years)