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VAISSIERE NICOLAS

  • Ph.D.
  • MOVPE Epitaxy Researcher
  • Nokia Bell Labs
  • 5PublicationsNumber of items in VAISSIERE's My Publications folder on Mendeley.
  • 11Followers

Followers (11)

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Publications (5)

  • Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells

    • Hamon G
    • Decobert J
    • Vaissiere N
    • et al.
    N/AReaders
    N/ACitations
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  • Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium

    • Bensalah H
    • Stenger I
    • Sakr G
    • et al.
    N/AReaders
    N/ACitations
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  • Porous diamond foam with nanometric diamond grains using Bias Enhanced Nucleation on iridium

    • Vaissiere N
    • Saada S
    • Lee K
    • et al.
    N/AReaders
    N/ACitations
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  • Characterization of the charge-carrier transport properties of IIa-Tech SC diamond for radiation detection applications

    • Pomorski M
    • Delfaure C
    • Vaissiere N
    • et al.
    N/AReaders
    N/ACitations
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  • Heteroepitaxial diamond on iridium: New insights on domain formation

    • Vaissiere N
    • Saada S
    • Bouttemy M
    • et al.
    N/AReaders
    N/ACitations

Professional experience

MOVPE Epitaxy Researcher

Nokia Bell Labs

September 2017 - Present

Post-doctoral position

Laboratory of Physics of Interfaces and Thin Films

December 2015 - August 2017(2 years)

Post-doctoral position

Condensed Matter Study Group

April 2014 - May 2015(a year)

PhD student

CEA Saclay

January 2011 - February 2014(3 years)

Master 2 Internship

Institut des Matériaux Jean Rouxel

February 2010 - June 2010(4 months)

Master 1 Internship

Institut des Matériaux Jean Rouxel

April 2009 - June 2009(2 months)

Education

PhD in physical and chemical science

Ecole Normale Superieure de Cachan

January 2011 - January 2014(3 years)

Master's degree in nanotechnology (C'NANO Nord Ouest)

Universite de Nantes

September 2009 - June 2010(9 months)