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Vladimir Mashanov

  • Rzhanov Institute of Semiconductor Physics SB RAS
  • 12h-indexImpact measure calculated using publication and citation counts. Updated daily.
  • 740CitationsNumber of citations received by Vladimir's publications. Updated daily.

Research interests

Growth of nano and heterostructures Si-Ge-Sn/Ge-Si by methods of molecular beam epitaxy.

Co-authors (95)

Publications (5)

  • Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

    • Esin M
    • Nikiforov A
    • Timofeev V
    • et al.
    N/AReaders
    0Citations
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  • Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

    • Timofeev V
    • Nikiforov A
    • Tuktamyshev A
    • et al.
    N/AReaders
    0Citations
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  • Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    • Timofeev V
    • Nikiforov A
    • Tuktamyshev A
    • et al.
    N/AReaders
    1Citations
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  • Growth of Epitaxial SiSn Films with High Sn Content for IR Converters

    • Timofeev V
    • Nikiforov A
    • Kokhanenko A
    • et al.
    N/AReaders
    0Citations
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  • Sn influence on MBE growth of GeSiSn/Si MQW

    • Tuktamyshev A
    • Timofeev V
    • Nikiforov A
    • et al.
    N/AReaders
    1Citations
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Professional experience

Institut fiziki poluprovodnikov imeni A V Rzhanova SO RAN