Skip to content
Journal article

A 0 . 039um 2 High Performance eDRAM Cell based on 32nm High-K / Metal SOI Technology

Butt N, Mcstay K, Cestero A, Ho H, Kong W, Fang S, Krishnan R, Khan B, Tessier A, Davies W, Zhang Y, Johnson J, Rombawa S, Takalkar R, Blauberg A, Hawkins K, Liu J, Rosenblatt S, Goyal P, Gupta S, Ervin J, Li Z, Galis S, Barth J, Weaver M, Li J, Narasimha S, Henson W, Robson N, Kirihata T, Chudzik M, Maciejewski E, Agnello P, Stiffler S, Iyer S, Junction H...(+36 more)

Area (2010) pp. 616-619

  • 23

    Readers

    Mendeley users who have this article in their library.
  • N/A

    Citations

    Citations of this article.
  • N/A

    Views

    ScienceDirect users who have downloaded this article.
Sign in to save reference

Author-supplied keywords

  • 27.5 A 0.039um² High Performance eDRAM Cell Base

Find this document

Cite this document

Choose a citation style from the tabs below