Journal article

A 0 . 039um 2 High Performance eDRAM Cell based on 32nm High-K / Metal SOI Technology

Butt N, Mcstay K, Cestero A, Ho H, Kong W, Fang S, Krishnan R, Khan B, Tessier A, Davies W, Zhang Y, Johnson J, Rombawa S, Takalkar R, Blauberg A, Hawkins K, Liu J, Rosenblatt S, Goyal P, Gupta S, Ervin J, Li Z, Galis S, Barth J, Weaver M, Li J, Narasimha S, Henson W, Robson N, Kirihata T, Chudzik M, Maciejewski E, Agnello P, Stiffler S, Iyer S, Junction H ...see all

Area (2010) pp. 616-619

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  • 27.5 A 0.039um² High Performance eDRAM Cell Base

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  • N Butt

  • K Mcstay

  • A Cestero

  • H Ho

  • W Kong

  • S Fang

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