200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating fmax > 800 GHz and f?? = 360 ghz

  • Lobisser E
  • Griffith Z
  • Jain V
 et al. 
  • 11

    Readers

    Mendeley users who have this article in their library.
  • 18

    Citations

    Citations of this article.

Abstract

Type I InP/InGaAs/InP double heterojunction bipolar transistors were fabricated using a simple mesa structure, where emitter junction widths have been scaled from 250 nm to 200 nm. These devices exhibit f max in excess of 800 GHz, and f tau = 360 GHz. Greater than fifty percent device yield was obtained by employing two 25 nm SiNx sidewalls to protect and anchor the refractory metal emitter contact to the emitter semiconductor. A hybrid dry and wet etch process is used to form a vertical emitter mesa, causing reductions in both the emitter-base gap resistance Rgap and the spreading resistance beneath the emitter Rb,spread, leading to an expected and observed increase in f max. Peak HBT current gains beta ap 21-33, BVceo ~ 4 V, BVcbo ~ 5 V, and Je at low Vcb is over 10 mA/mum2.

Author-supplied keywords

  • InP heterojunction bipolar transistor

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Get full text

Authors

  • Evan Lobisser

  • Zach Griffith

  • Vibhor Jain

  • Brian J. Thibeault

  • Mark J W Rodwell

  • Dmitri Loubychev

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free