227 nm AlGaN light-emitting diode with 0.15 mW output power realized using a thin quantum well and AIN buffer with reduced threading dislocation density

  • Hirayama H
  • Noguchi N
  • Yatabe T
 et al. 
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Abstract

AlGaN multi-quantum-well (MQW) deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on\r sapphire substrates with emission at 227 nm are demonstrated. A remarkable enhancement in the DUV\r LED output power was achieved by using a thin AlGaN quantum well only 1.3 nm in thickness, with\r atomically flat hetero-interfaces, together with an AlN buffer layer of reduced threading\r dislocation density. The AlGaN-MQW DUV LEDs exhibited single emission peaks. The output power was\r 0.15 mW with injection current of 30 mA and the maximum external quantum efficiency was 0.2%, under\r room temperature pulsed operation.

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Authors

  • Hideki Hirayama

  • Norimichi Noguchi

  • Tohru Yatabe

  • Norihiko Kamata

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