8.3 kV 4H-SiC pin diode on (000-1) C-face with small forward voltage degradation

  • Nakayama K
  • Sugawara Y
  • Tsuchida H
 et al. 
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Abstract

The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward < 11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and &UDelta; V-f of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.

Author-supplied keywords

  • C-face
  • PiN diode
  • face
  • forward voltage degradation

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Authors

  • K Nakayama

  • Y Sugawara

  • H Tsuchida

  • T Miyanagi

  • I Kamata

  • T Nakamura

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