The adsorption of oxygen at GaN surfaces

  • Zywietz T
  • Neugebauer J
  • Scheffler M
  • 96

    Readers

    Mendeley users who have this article in their library.
  • 154

    Citations

    Citations of this article.

Abstract

A critical point in device fabrication based on GaN is the controlled doping and the incorporation of impurities like, e.g., oxygen. We have explored the adsorption of oxygen at the wurtzite (0001) and (0001̄) GaN surfaces employing density-functional theory. Our results show that both surface orientations are very active towards oxygen adsorption, explaining the high oxygen concentrations typically observed in GaN. However, the (0001) and (0001̄) surfaces behave differently and oxygen incorporation is expected to be higher at the (0001̄) surface. The different reactivity is explained in terms of the specific structural configurations.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Tosja K. Zywietz

  • Jörg Neugebauer

  • Matthias Scheffler

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free