AlGaAs defect characterization in high electron mobility transistors by thermally stimulated drain conductance

  • Chi J
  • Holmstrom R
  • Salerno J
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Abstract

A method based on monitoring the thermally stimulated drain
conductance (TSDC) under trap filling and emptying bias-temperature sequences is
developed for directly characterizing high defect density AlGaAs layers in high
electron mobility transistors (HEMT's). The rate equation for trapped electron
emission is solved for the conditions pertinent to the TSDC method. Measured
results on HEMT's are in excellent agreement with this solution and compare
favorably with values reported by others. TSDC is as convenient to implement but
more applicable than deep-level transient spectroscopy (DLTS) for the high
concentration of AlGaAs defects normally encountered in HEMT's.

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Authors

  • J Y Chi

  • R P Holmstrom

  • J P Salerno

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