Analysis of the drude model in metallic films.

  • Li H
  • Zhou S
  • Li J
 et al. 
  • 29


    Mendeley users who have this article in their library.
  • 19


    Citations of this article.


A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi(2) and TaSi(2), films have been studied.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • H Y Li

  • S M Zhou

  • J Li

  • Y L Chen

  • S Y Wang

  • Z C Shen

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free