Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application

  • Lee S
  • Kim H
  • McIntyre P
 et al. 
  • 17

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Abstract

A metal–insulator–metal (MIM) capacitor using ZrO 2 on tungsten (W) metal bottom electrode was demonstrated and characterized in this letter. Both ZrO 2 and W metal were synthesized by an atomic layer deposition(ALD) method. High-quality 110∼115 Å ZrO 2 films were grown uniformly on ALD W using ZrCl 4 and H 2 O precursors at 300 °C, and polycrystalline ZrO 2 in the ALD regime could be obtained. A 13∼14-Å -thick interfacial layer between ZrO 2 and W was observed after fabrication, and it was identified as WO x through angle-resolved x-ray photoelectron spectroscopyanalysis with wet chemical etching. The apparent equivalent oxide thickness was 20∼21 Å. An effective dielectric constant of 22∼25 including an interfacial WO x layer was obtained by measuring capacitance and thickness of MIM capacitors with Pt top electrodes. High capacitance per area (16∼17 fF /μ m 2 ) and low leakage current (10 −7 A/cm 2 at ±1 V) were achieved.

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Authors

  • Sang-Yun Lee

  • Hyoungsub Kim

  • Paul C. McIntyre

  • Krishna C. Saraswat

  • Jeong-Soo Byun

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