Auger Recombination with Traps

Abstract

Auger recombination in semiconductors involving traps is calculated taking into account the statistics of the traps. The results are valid for different traps and different cases of ionization and excitation. In particular, localized traps (δ‐potential model) and non‐localized traps (hydrogen model) are compared with the result that the depth of the traps is essential for Auger recombination, but not their localisation. Copyright © 1980 WILEY‐VCH Verlag GmbH & Co. KGaA