The electrical properties of the interface between pyrolytically deposited SiO2and InAs have been investigated by measuring the admittance of Al-SiO2-InAs MOS diodes at room temperature and 77°K. The room temperature measurements yield a rather high surface state density of 2·5 × 1012states/eV/cm2. The surface state density undergoes an anomalous decrease to 2·8 × 1011states/eV/cm2at 77°K. A charge which is linearly dependent on the voltage across the oxide is trapped in the oxide. Conduction through the oxide causes the diodes to enter a deep depletion condition at 77°K. © 1971.
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