Capacitance-Voltage and Interface State Density Characteristics of GaAs and InGaAs MOS Capacitors Incorporating a PECVD SiN Dielectric. [ECS Transactions 35, 415 (2011)]. Eamon O'Connor, Vladimir Djara, Scott Monaghan, Paul Hurley, Karim Cherkaoui. Abstract. ...
CITATION STYLE
O’Connor, E., Djara, V., Monaghan, S., & Hurley…, P. (2011). Capacitance-Voltage and Interface State Density Characteristics of GaAs and InGaAs MOS Capacitors Incorporating a PECVD SiN Dielectric. Link.Aip.Org. Retrieved from http://link.aip.org/link/abstract/ECSTF8/v35/i3/p415/s1
Mendeley helps you to discover research relevant for your work.